Modeling of bombardment-induced diffusion and segregation during the self-sputtering of Ga+ ions at SiO2/Si interfaces

A Monte Carlo computer simulation code is developed to include the effects of both Radiation-Enhanced Diffusion (RED) and Bombardment-Induced Segregation (BIS). An appropriate model is created and implemented into the existing dynamic TRIM code, which is based on the extension of the cascade part of the code so that it can also treat the post-cascade transport of the point defects, created previously. The model is tested and the influence of the diffusion and segregation on the sputtering yield of the elements is illustrated in the case of self-sputtering of Ga ions during profiling of SiO2/Si interfaces. The redistribution of the target elements due to the ballistic and transport processes is investigated and compared with experimental SNMS profiles.