Author/Authors :
Shude، نويسنده , , Yao and Shengqiang، نويسنده , , Zhou and Shengxian، نويسنده , , Jiao and Zhaoxiang، نويسنده , , Meng and Yihong، نويسنده , , Lu and Changchun، نويسنده , , Sun and Chang، نويسنده , , Sun and Vantomme، نويسنده , , A. and Langouche، نويسنده , , G. and Pipeleers، نويسنده , , B. and Zhao، نويسنده , , Q.، نويسنده ,
Abstract :
The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling were studied. The samples were grown on sapphire by metal-organic vapor-phase epitaxy. The H+, He+, N+ with different ion energies and doses were implanted into GaN. Post-implantation annealing were investigated. We observed 7–8 orders increasing of resistivity by Hall measurements after specific temperature annealing, and the optimized annealing temperature is approximately 200–400 °C for H+, He+ and N+ respectively. Even after 600–700 °C annealing, the resistivity is still very high. We think vacancies and radioactive damage by implantation are responsible for resistivity changes in GaN samples.
