Title of article :
Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation
Author/Authors :
Tashmukhamedova، نويسنده , , D.A. and Umirzakov، نويسنده , , B.E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
The influence of Ar+ and Ba+ ion implantation on the composition and structure of GaAs films is considered in this work. Information about the density distribution of the electronic states and the parameters of the energy bands of the ion-implanted GaAs films was obtained using Auger electron spectroscopy (AES), ultraviolet photoelectron emission spectroscopy (UPES) and high-energy electron diffraction (HEED).
Keywords :
Intensive desorption of As atoms , Ion implantation of active elements , Decomposition of GaAs , Electronic structure , Photoelectron emission spectroscopy
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology
