Dependence of the bonding structure of DLC thin films on the deposition conditions of PECVD method

Diamond-like carbon (DLC) films were deposited by using a plasma enhanced chemical vapor deposition (PECVD) onto Si(1 0 0) wafer. We observed the variations of the D and G peaks of the DLC thin films with respect to the deposition conditions. The change of the intensity ratio (ID/IG) of the DLC thin films was investigated as a function of RF power and pressure which were the important variables in PECVD. DLC films showed an ultra-smooth surface (r.m.s. roughness=1.2 إ) and an impurity-free quality. With the increase of the RF power, roughness of the films was varied between 1.2 and 26.24 إ. Atomic force microscopy was used to observe the surface roughness.