Ion beam analysis of low-temperature MO-PACVD coatings

Plasma-assisted CVD using metal organic precursor was studied at process temperatures of 100 and 160 °C in a capacitive coupled plasma reactor. Ion beam analyses were performed to assess the stoichiometry of TiCN, ZrCN and BCN films on AlMgSi and Si substrates. Hydrogen content and desorption correction factors are discussed as a function of the deposition parameters. The plasma does assist the CVD process, even at these low temperatures, in the form of ion beam bombardment during deposition.