Nucleation and growth behavior of chromium nitride film deposited on various substrates by magnetron sputtering

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such structure and electrical properties, chromium nitride (CrN) films were deposited on various substrates (glass, AISI 1040 steel and Si(1 1 0)) by unbalanced magnetron sputtering. X-ray diffraction and atomic force microscopy were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si(1 1 0) exhibited crystalline structure with highly preferred orientation of (2 0 0) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (2 0 0) and minor orientation (1 1 1), (3 1 1) or (2 2 0) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). At the same time, the crystallites of films deposited on AISI 1040 steel with the bias voltage of Vs=−100 V had the orientation of (2 2 0) plane parallel to the substrate. The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).