Title of article :
Characterization of WC–CrAlN heterostructures obtained using a cathodic arc ion plating process
Author/Authors :
Lee، نويسنده , , Ho Y. and Han، نويسنده , , Jeon G. and Baeg، نويسنده , , Seung H. and Yang، نويسنده , , Se H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
303
To page :
309
Abstract :
New WC–CrAlN heterostructure films were deposited on Si wafer and S45C steel substrate by a cathodic arc ion plating (CAIP) process. The Al concentration and bilayer repeat period (λ; 2–10 nm) were controlled to obtain a nano-layered structure. We have characterized our samples using X-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM) and electron diffraction patterns. Mechanical properties of the WC–CrAlN films were characterized using nano-indentation tests, residual stress evaluation and scratch testing. The microhardness of WC–CrAlN films was in the range of 30–43 GPa. The residual stress was reduced below 2 GPa and the adhesion strength obtained was approximately 50 N by alternative deposition of heterostructure (WC–CrAlN) and buffer (WC–Cr) layers.
Keywords :
WC–CrAlN , Buffer layer , heterostructure
Journal title :
Surface and Coatings Technology
Serial Year :
2003
Journal title :
Surface and Coatings Technology
Record number :
1806431
Link To Document :
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