• Title of article

    Characterization of WC–CrAlN heterostructures obtained using a cathodic arc ion plating process

  • Author/Authors

    Lee، نويسنده , , Ho Y. and Han، نويسنده , , Jeon G. and Baeg، نويسنده , , Seung H. and Yang، نويسنده , , Se H.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    303
  • To page
    309
  • Abstract
    New WC–CrAlN heterostructure films were deposited on Si wafer and S45C steel substrate by a cathodic arc ion plating (CAIP) process. The Al concentration and bilayer repeat period (λ; 2–10 nm) were controlled to obtain a nano-layered structure. We have characterized our samples using X-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM) and electron diffraction patterns. Mechanical properties of the WC–CrAlN films were characterized using nano-indentation tests, residual stress evaluation and scratch testing. The microhardness of WC–CrAlN films was in the range of 30–43 GPa. The residual stress was reduced below 2 GPa and the adhesion strength obtained was approximately 50 N by alternative deposition of heterostructure (WC–CrAlN) and buffer (WC–Cr) layers.
  • Keywords
    WC–CrAlN , Buffer layer , heterostructure
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2003
  • Journal title
    Surface and Coatings Technology
  • Record number

    1806431