Title of article :
Remote nitridation of silicon surface by Ar/N2-fed expanding thermal plasma
Author/Authors :
Dinescu، نويسنده , , G. and Creatore، نويسنده , , M. and van de Sanden، نويسنده , , M.C.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
370
To page :
374
Abstract :
Low temperature nitridation of native oxidized silicon surface using Ar/N2-fed expanding thermal plasma was investigated. Samples were exposed to the plasma downstream the arc nozzle. X-Ray photoelectron spectroscopy analysis showed that the nitrogen is chemically bonded to silicon, resulting in the change of the native oxide layer into an oxynitride layer. Secondary ion mass spectrometry and low energy ion scattering analyses provided the in-depth distribution of elements, showing that the oxynitride layer approximately reaches a thickness of 5 nm for a treatment time of 30 min. The plasma nitridation process has a passivation effect and provides the surface with increased etching resistance against Ar/SF6-fed expanding thermal plasma.
Keywords :
Silicon nitride , Silicon oxynitride , Remote plasma , Nitridation
Journal title :
Surface and Coatings Technology
Serial Year :
2003
Journal title :
Surface and Coatings Technology
Record number :
1806458
Link To Document :
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