Title of article :
Formation of TiN, TiC and TiCN by metal plasma immersion ion implantation and deposition
Author/Authors :
Huber، نويسنده , , P. and Manova، نويسنده , , D. and Mنndl، نويسنده , , S. and Rauschenbach، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
1243
To page :
1247
Abstract :
Titanium nitride, titanium carbide and titanium carbonitride are well known compounds displaying a rather high hardness and melting point, thus enabling their use as hard coatings. With a titanium cathode and both nitrogen and methane gas, a series of compound TiCxNy can be prepared with the final points TiN and TiC using metal plasma immersion ion implantation and deposition. The respective properties of the films are investigated by X-ray diffraction and Rutherford backscattering spectroscopy. With increasing pulse voltage, a decreasing carbon content and growth rate is found for the TiC series, while no such effect is observed for corresponding TiN films.
Keywords :
Titanium nitride , Titanium carbide , Rutherford backscattering spectroscopy , MePIIID
Journal title :
Surface and Coatings Technology
Serial Year :
2003
Journal title :
Surface and Coatings Technology
Record number :
1806888
Link To Document :
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