High dose low temperature Ti and Al implantation in metals

This article presents the results of investigation of Ti and Al ion implantation into copper and uranium. Titanium and aluminium are selected as implanted ions because these materials are the main candidates to the production of corrosion resistant protective coatings. Special features of near-surface transient layers formation at high dose low energy implantation are investigated. The temperature dependencies of Al concentration in near-surface layers of Cu are plotted. The time and energy dependence of Al and Ti concentration curves on the irradiation energy in the range 1.0–4.0 keV is studied. The calculations of the impurity radiation-stimulated diffusion at the high dose implantation are carried out.