Crystallinity of Al2O3 films deposited by metalorganic chemical vapor deposition

Growth of Al2O3 films on Si(1 1 1) substrates by metalorganic chemical vapor deposition (MOCVD) has been investigated. Films were deposited by MOCVD with aluminum–acetylacetonate as a precursor at various temperatures. At low temperatures (350–550 °C) amorphous films were obtained. As the temperature increased beyond 550 °C, the presence of crystalline Al2O3 was detected. At high temperatures (750–950 °C), the crystallinity of the film increased and a 〈0 1 1〉 κ-Al2O3 textured film growth was observed at 950 °C.