Plasma diagnostics as a tool for the modeling and simulation of sputter processes

Over the last few years modeling and simulation has become an expanding research field due to the immense progress in computer power. It is now possible to simulate complex processes like the magnetron sputter ion plating (MSIP) process. Process simulation can be characterized by essential features. On the one hand, it enables the calculation of immeasurable variables, while on the other hand, it allows the omittion of many expensive experiments. This leads to a cost reduction and decreased exposure potential danger, while using toxic materials in experiments. Commonly, MSIP simulations are difficult to verify and there are to date only a few applications of plasma diagnostics in modeling and simulation. To achieve realistic results from simulations requires greater knowledge of plasma properties. This article gives a brief introduction into the modeling and simulation of the MSIP process in which energy resolved mass spectroscopy is presented as a tool for the generation of boundary conditions. This diagnostic method allows the measurement of the composition, energy distribution and degree of ionization. Therefore, the cathode power, bias voltage and coating pressure are taken as basic variables. The cathode power represents one of the essential factors that influence the degree of ionization. The bias voltage is responsible for the ion impact properties of the substrate, and pressure is connected with the mean free path and the collision of the particles. The measurements were performed for nitride hard coatings. A perspective for the use of further plasma diagnostics in the MSIP simulation is given at the end of this article.