Title of article
New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering
Author/Authors
Fortunato، نويسنده , , E. and Gonçalves، نويسنده , , A. and Marques، نويسنده , , A. and Viana، نويسنده , , A. and ءguas، نويسنده , , H. and Pereira، نويسنده , , L. and Ferreira، نويسنده , , I. and Vilarinho، نويسنده , , P. and Martins، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
20
To page
25
Abstract
Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5×10−4 Ω cm with a Hall mobility of 13.7 cm2/Vs and a carrier concentration of 8.6×1020 cm−3. These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film.
Keywords
Zinc oxide , Gallium , Thin film , r.f. magnetron sputtering , Transparent conductive oxide , Polymeric substrates
Journal title
Surface and Coatings Technology
Serial Year
2004
Journal title
Surface and Coatings Technology
Record number
1807473
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