Improved film deposition of carbon and carbon nitride materials on patterned substrates by ionized magnetron sputtering

This work is mainly devoted to the study of thin film deposition by ionized magnetron sputtering (IMS). This process is based on a standard magnetron cathode sputtering deposition assisted by an induced r.f. discharge generated by an r.f. powered coil (antenna), placed between the substrate and the cathode (target). A very different deposition behavior is obtained compared to a classical magnetron process. We have used IMS for carbon and carbon nitride deposition in order to improve the relatively low deposition rate obtained by magnetron sputtering. In this paper, the ability of IMS to fill holes and trenches of micronic and sub-micronic size with amorphous carbon and carbon nitride films is particularly studied. Several patterns realized onto silicon substrates have been used: holes and trenches of different width. In particular, the influence of the substrate bias voltage is studied by determining the deposition rate at the top and the bottom of the holes and trenches. Moreover, the investigation by scanning electron microscopy of the film morphology has revealed the growth of original structures.