Transparent conducting In2O3 thin films prepared by ultrasonic spray pyrolysis

Indium oxide (In2O3) thin films have been prepared by the spray pyrolysis method. The effect of a deposit temperature and a deposit time on the electrical and optical properties of films has been investigated to obtain highly conductive transparent In2O3 thin films. Bare glass was used as a substrate and oxygen as the carrier and reaction gas. X-Ray diffraction (XRD) patterns showed that films were polycrystalline and that their crystallinities were proportional to deposit time and deposit temperature. A difference in surface morphology was observed in the films according to deposit temperature using scanning electron microscopy (SEM). The minimum resistivity value was 4.34×10−3 Ω cm in the films deposited at 500 °C for 90 min, whose carrier concentration and Hall mobility were 1.057×1020 cm−3 and 14.783 cm2/V s, respectively. In addition, the optical transmittance of films were approximately 87.5% in the visible range.