Excimer laser induced crystallization of amorphous hydrogenated carbon–germanium films fabricated by plasma CVD

Excimer laser irradiation was demonstrated to be effective for the crystallization of the semiconducting form (a-S) of amorphous hydrogenated carbon−germanium (a-GeXCY:H) films in contrast to the insulating form (a-I) of these films that were resistant to such a treatment. Electrical conductivity, electron diffraction and Raman spectroscopy were used to characterize non-treated and laser beam treated a-S films. Two separate nanocrystalline phases, germanium and graphite-like, were found in these films after the excimer laser crystallization (ELC). A drastic change in the electrical conductivity mechanism from temperature activated to almost temperature independent was also observed.