Author/Authors :
Jelinek، نويسنده , , M. and Klini، نويسنده , , A. and Kocourek، نويسنده , , T. and Zeipl، نويسنده , , R. and Santoni، نويسنده , , A. and Fotakis، نويسنده , , C. and Kaminska، نويسنده , , E.، نويسنده ,
Abstract :
The ZnO films were created by nanosecond and subpicosecond PLD in nitrogen–oxygen ambient for various deposition conditions and geometrical configurations. All films were c-axis oriented. Films exhibited n-type conductivity. The nitrogen content in the films was below the detection limit of Rutherford Backscattering (RBS), wavelength dispersive X-ray spectroscopy (WDX) and X-ray photoelectron spectroscopy (XPS). The content of 1021 at/cm3 was demonstrated by secondary ion mass spectroscopy (SIMS). Resistivity, mobility and carrier density were also measured.
