Title of article
Investigations of silicon nitride layers deposited in pulsed microwave generated ammonia–silane plasmas
Author/Authors
Krüger، نويسنده , , J. and Schweitzer، نويسنده , , U. and Schneider، نويسنده , , J. and Schulz، نويسنده , , A. and Walker، نويسنده , , M. and Schumacher، نويسنده , , U.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
639
To page
643
Abstract
Pulsed plasmas are of increasing importance for applications of high rate film deposition or etching processes under low plasma induced damage. The deposition rate and the characteristics of silicon nitride films can be strongly influenced by a suitable choice of the pulse parameters like pulse/pause ratio, the pulse frequency and the composition of the reactants. The intention of these investigations is to optimise the deposition of silicon nitride films in pulsed microwave plasmas.
Keywords
Silicon nitride , optical spectroscopy , Deposition , Pulsed microwave plasma
Journal title
Surface and Coatings Technology
Serial Year
2005
Journal title
Surface and Coatings Technology
Record number
1810173
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