The low temperature synthesis of Al doped ZnO films on glass and polymer using magnetron co-sputtering: Working pressure effect

Transparent conductive Al doped ZnO thin films were prepared on glass and polymer substrates by unipolar pulsed d.c. co-CFUBM (Closed Field Unbalanced Magnetron) sputtering at ZnO and Al targets without introducing any oxygen at room temperature. The lowest resistivity of 1.2 mΩ cm as well as the transmittance of above 84% was obtained by controlling working pressure. But the resistivity is slightly increased up to 6.8 mΩ cm with time passing due to the unstable microstructure caused by the low temperature process.