Self-assembled nano-tiles of zinc-blende SiC on Si(100) using organometallic ion beam deposition with simultaneous electron beam irradiation

The self-assembled SiC nano-tiles were fabricated using organometallic ion beam deposition with simultaneous electron beam irradiation. The single precursor of SiCH3+ ion with energy of 100 ± 1 eV was deposited on Si(100) substrate at a temperature of 600 °C and the electron beam was irradiated simultaneously during the SiC formation. The self-assembled SiC nano-tiles formed on Si(100) were heteroepitaxial zinc-blende SiC (3C–SiC). The electron beam-assisted irradiation during the SiC formation had effects on shape, size and density of the self-assembled SiC nano-tiles.