Oxidation behavior of 2D C/SiC with a multi-layer CVD SiC coating

The oxidation behavior of a 2D C/SiC with a multi-layer CVD SiC coating deposited slowly was investigated in simulated air at 1300 °C using a thermogravimetric (TG) device. No gaps were observed between the layers in the dense coating by SEM. The composite showed a continuous weight gain during the oxidation period of 15 h at 1300 °C. The relationship between weight gain and time showed two different oxidation behaviors: rapid oxidation and rigid oxidation. The rapid oxidation fitted a parabolic law and surface oxidation of the SiC coating, while the rigid oxidation fitted a quasi-linear manner and correlated with continuously formation and sealing of defects in silicon dioxide film. The film showed a phase transition from amorphous SiO2 to cristobalite.