Development of thermodynamic modeling of oxygen-doped GaN semiconductor

The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.