• Title of article

    Thermodynamic modeling of the V–Si system supported by key experiments

  • Author/Authors

    Zhang، نويسنده , , Chao and Du، نويسنده , , Yong and Xiong، نويسنده , , Wei and Xu، نويسنده , , Honghui and Nash، نويسنده , , Philip and Ouyang، نويسنده , , Yifang and Hu، نويسنده , , Rongxiang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    6
  • From page
    320
  • To page
    325
  • Abstract
    The V–Si system is reassessed based on a critical literature review involving recently reported data and the present experimental data. These new data include the thermodynamic stability of V 6Si5 and the enthalpies of formation for the compounds calculated by first-principles method. Two alloys were prepared in the region of (Si)+V Si2 and annealed at 1273 K for 14 days. After X-ray diffraction (XRD) and chemical analysis of these alloys were performed, the eutectic reaction (L⇔(Si)+V Si2) temperature was determined by differential thermal analysis (DTA). Self-consistent thermodynamic parameters for the V–Si system were obtained by optimization of the selected experimental values. The calculated phase diagram and thermodynamic properties agree well with the experimental ones. Noticeable improvements have been made, compared with the previous assessments.
  • Keywords
    V–Si phase diagram , X-ray diffraction , Differential thermal analysis , Thermodynamic calculation
  • Journal title
    Calphad
  • Serial Year
    2008
  • Journal title
    Calphad
  • Record number

    1815270