Title of article :
Deposition of TiO2 Films by reactive Inductively Coupled Plasma assisted DC magnetron sputtering for high crystallinity and high deposition rate
Author/Authors :
Han، نويسنده , , Y.H. and Jung، نويسنده , , S.J. and Lee، نويسنده , , J.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
5387
To page :
5391
Abstract :
TiO2 films with high crystallinity were produced at a high deposition rate by inductively coupled plasma (ICP) assisted reactive magnetron sputtering. X-ray diffraction, UV–VIS spectrophotometer, and an α-step profilometer were used for the analysis of film characterization. The deposition rate was > 20 nm/min and the structure of the TiO2 film changed with the deposition pressure. Anatase phase was obtained at 4 Pa without after-heat treatment, while amorphous and rutile phases were produced at < 2.67 Pa. The optical transmission was changed according to the target surface condition, and was as high as > 80% in the transition mode.
Keywords :
ICP , reactive sputtering , voltage control , Anatase , TIO2 , Transition mode
Journal title :
Surface and Coatings Technology
Serial Year :
2007
Journal title :
Surface and Coatings Technology
Record number :
1815647
Link To Document :
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