The effect of annealing atmosphere on photoluminescent properties of SiCN films

SiCN films were synthesized by reactive sputtering of Si/C composite target in N2, and then annealed at 1200 °C for 30 min in several gases (argon, nitrogen, and hydrogen). Intensive photoluminescence peaks at 355 nm (3.49 eV) and 469 nm (2.64 eV) were found from the sample annealed in H2. Results of X-ray diffraction, transmission electron microscope, and energy dispersion spectroscopy showed that the enhancement of photoluminescent (PL) properties is due to the change of the microstructure of the films. Using H2 as the protective gas is an effective way to obtain ideal composition and microstructure of the films during annealing treatment.