Author/Authors :
Topi?، نويسنده , , M. and Nsengiyumva، نويسنده , , S. and Bucher، نويسنده , , R. and Naidoo، نويسنده , , S.R. and Derry، نويسنده , , T.E. and Comrie، نويسنده , , C.M. and Theron، نويسنده , , C. and Britton، نويسنده , , D.T. and H?rting، نويسنده , , M.، نويسنده ,
Abstract :
The effect of ion implantation on surface modification was focused on the residual stress aspect in the model system krypton/titanium. The krypton ions have been implanted in the polycrystalline titanium samples with different doses, 1 × 1016 and 5 × 1016 Kr+/cm2. The stress results obtained by X-ray diffraction show that krypton implantation has a beneficial effect in terms of reducing the initial stress developed during titanium manufacturing. However, it was found that the significance of stress relaxation depends on the (hkl)-reflection. Considering the concentration profiling, the RBS shows that the Kr ions penetrate deeper into the material when implanted with lower doses, 1 × 1016 Kr+/cm2.
Keywords :
Residual stress , Ion implantation , X-ray diffraction , Surface modification
