Title of article :
Chemical composition and bond structure of carbon-nitride films deposited by CH4/N2 dielectric barrier discharge
Author/Authors :
Majumdar، نويسنده , , Abhijit and Schنfer، نويسنده , , Jan and Mishra، نويسنده , , Puneet and Ghose، نويسنده , , Debabrata and Meichsner، نويسنده , , Jürgen and Hippler، نويسنده , , Rainer، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
Carbon nitride films have been deposited by dielectric barrier discharge with a CH4/N2 gas mixture at different conditions. Fourier Transform Infrared (FTIR) spectroscopy, X-ray photo electron spectroscopy (XPS), Raman spectroscopy, Atomic force microscopy (AFM) and ellipsometry were used to systematically study chemical composition, bond structure and surface morphology of deposited films. Various bonds between carbon, nitrogen, hydrogen, and also oxygen were observed.
Keywords :
CN film , Dielectric barrier discharge , XPS , infrared spectroscopy
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology
