Incident ion fluence gradients on the front and backside of flat samples

Plasma immersion ion implantation (PIII) is ideal for fast and efficient treatment into three-dimensional objects, as shown by experiments and simulations. In this presentation, a direct comparison of implantations into the front and backside of flat sample (disc, square and rectangle) at 5–15 kV pulse voltage with argon ions is performed with the spatial distribution of the incident ion fluence measured by spectroscopic ellipsometry on SiO2/Si coupons. A strong influence of the supporting rod for the fluence distribution on the backside of the low symmetry samples, i.e. square and rectangle was observed, in contrast to no influence for the disc sample.