Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogen

We have synthesized gallium oxide (Ga2O3) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C2H2) or argon ions. For samples implanted with N2, and C2H2 ions, subsequent RTA at 950 °C within 2 min produced Ga2O3 nanoribbons on the substrate surface. Our results suggest that each implanted species plays a different role in assisting the growth of these nanomaterials. Carbon is a key element for reduction and oxidation of Ga2O3, which can increase the growth rate of Ga2O3 nanoribbons. On the other hand, implanted nitrogen forms intermediate gallium nitride nanograins, which may in turn lead to the formation of nanograins of Ga2O3 upon reacting with ambient oxygen. These Ga2O3 nanograins then act as a growth template for nanowires or nanoribbons.