Improving thromboresistance of Ti–O films by phosphorus-doping: Fabricating conditions, characteristics and antithrombotic behavior

Surface modification has become an important way to develop new antithrombotic biomaterials. In the past ten years Ti–O films have been engaging much research attention because of their excellent antithrombotic properties. In order to understand the thromboresistance mechanisms involved, we focus our attention in this work on the influence of phosphorus doping on the structure, properties and thromboresistance behavior of these films. The results show that the electrical resistance of the film decreases with increasing annealing temperature, and that phosphorus is redistributed within the film after annealing. The films exhibit different wettability after annealing at various temperatures. P-doped Ti–O thin films show significant improvement of thromboresistance after annealing at higher temperatures. It is suggested that the thromboresistance of Ti–O thin films is related to their semiconductor nature.