Surface characterization of silicon carbide following shallow implantation of platinum ions

Silicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we report on the temperature-dependent structural changes of silicon carbide substrates implanted with 13 keV Pt ions, providing a hydrogen-sensitive medium, and coated with W, providing electrical contacts to the device.