Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

A polycrystalline silicon carbide film is formed on a silicon surface by atmospheric pressure chemical vapor deposition using a gas mixture of monomethylsilane and hydrogen chloride in ambient hydrogen. The film deposition near 1000 K stops within 1 min. However, the film thickness, obtained before the saturation of the deposition, increases by increasing the monomethylsilane gas flow rate. Because the film surface is considered to be terminated with hydrogen bonding with carbon, a further deposition is enabled by annealing step at 1273 K to remove hydrogen. By means of the high temperature annealing and by increasing the monomethylsilane gas flow rate, thick SiC film can be obtained.