Title of article :
Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching
Author/Authors :
Nakamura، نويسنده , , Toshihiro and Homma، نويسنده , , Kohei and Yakushiji، نويسنده , , Takashi and Tai، نويسنده , , Ryusuke and Nishio، نويسنده , , Akira and Tachibana، نويسنده , , Kunihide، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
Pr1−xCaxMnO3 (PCMO) films with the desired atomic composition were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using in situ infrared spectroscopic monitoring. The I–V characteristics exhibited nonlinear, asymmetric, and hysteretic behavior in PCMO-based devices with top electrode of Al or Ti. The electric-pulse-induced resistance switching was observed in the PCMO-based devices. The resistance change was dependent on the Pr/Ca composition ratio of the PCMO films and the kind of the top electrodes.
Keywords :
MOCVD , Resistance random access memory , Manganite , resistance switching
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology
