AlN nanoclusters formation by plasma ion immersion implantation

We report on simultaneous (Al + N) implantation of Al and N into layers of amorphous thermal silica (SiO2) in an attempt to bond Al with N and form the binary compound AlN. As an implantation technique, plasma ion immersion implantation (PIII) is used. The energy and ion fluence were varied in order to obtain nanocluster containing films in the thickness range 10–50 nm. The elemental distribution profiles in the substrate were evaluated by means of elastic recoil detection analysis technique (ERDA). The nature of the chemical bonds was determined by X-ray photoelectron spectroscopy (XPS). The simultaneous implantation using rf plasma source for N ions and a cathodic arc to produce the Al ions provides good overlap of the elemental profiles and high retained doses of Al and N are achieved. The binding energies of the Al 2p and N 1s core electrons indicate that formation of near-stoichiometric aluminium nitride is achieved.