Title of article :
Nanoscale surface and interface engineering: Why plasma-aided?
Author/Authors :
Ostrikov، نويسنده , , K. and Xu، نويسنده , , S. and Huang، نويسنده , , S.Y. and Levchenko، نويسنده , , I.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
5314
To page :
5318
Abstract :
This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.
Keywords :
PECVD , Surface and interface properties , Plasma sources , p–n junction , solar cells , nanofilms
Journal title :
Surface and Coatings Technology
Serial Year :
2008
Journal title :
Surface and Coatings Technology
Record number :
1819456
Link To Document :
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