• Title of article

    Nanoscale surface and interface engineering: Why plasma-aided?

  • Author/Authors

    Ostrikov، نويسنده , , K. and Xu، نويسنده , , S. and Huang، نويسنده , , S.Y. and Levchenko، نويسنده , , I.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    5
  • From page
    5314
  • To page
    5318
  • Abstract
    This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.
  • Keywords
    PECVD , Surface and interface properties , Plasma sources , p–n junction , solar cells , nanofilms
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2008
  • Journal title
    Surface and Coatings Technology
  • Record number

    1819456