Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

Undoped ZnO, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were deposited on silica glass substrate at room temperature in a vacuum by KrF excimer laser (λ = 248 nm) pulsed laser deposition method. The transparency of ZnO thin films showed the dependence on deposition area. The relationship between emission spectra and the crystallographic structure, the electrical and optical properties of ZnO films prepared at different substrate positions were investigated. An optical measurement showed that film thickness of all substrate position was about 350 nm and maximum transparency of thin film in all substrate position was about 70% in visible region. AZO and GZO thin films showed lower resistivity of below the order of ~ 10− 3 Ωcm independence on substrate position. Emission lines of Zn, O and Ga atom were observed in all substrate position.