Dielectric barrier discharge assisted chemical vapor deposition of boron nitride phosphide films on a quartz substrate

Boron nitride phosphide films were deposited on a quartz substrate by dielectric barrier discharge assisted chemical vapor deposition. From results of X-ray photoelectron and UV–Vis absorption spectral measurements, the chemical composition of the films may be defined as BN1 − xPx, where the mole number (x) is variable between 0.25–0.58, through modifying the PH3 flow rate in the film deposition process, and the corresponding optical band gap may be modulated between 4.17–3.25 eV. From measurements of X-ray diffraction and high resolution transmission electron microscopy, an amorphous matrix embedded with a hexagonal crystalline phase of BNP with a crystal lattice spacing of 0.35 nm and a textured pattern is observed. The BN1 − xPx films are smooth, well-adhered to the quartz substrate, and display dark resistivities on the order of 1011 Ω cm and ultraviolet light photo/dark conductivity ratios higher than 103, with negligible sensitivity in the visible region, indicating a potential application in visible/blind UV detectors.