Title of article :
Creating surface nanostructures in GaAs by MeV Au2+ ions
Author/Authors :
Sinha، نويسنده , , O.P. and Ganesan، نويسنده , , V. and Som، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
3
From page :
2490
To page :
2492
Abstract :
GaAs(100) samples were exposed to 1.5 MeV Au2+ ions at room temperature. Changes in the surface morphology and the structural properties of ion irradiated GaAs samples were studied as a function of ion fluence in the range of 1 × 1014–1 × 1015 ions cm− 2 at an incident angle of 75°. The samples were investigated by atomic force microscopy and micro-Raman spectroscopy. We observe the formation of nanodots on the irradiated surfaces. The room-temperature micro-Raman investigation of these nanostructures reveals optical phonon softening due to phonon confinement in the surface nanostructures. The observed features are discussed in the framework of ion-matter interaction in the MeV regime.
Keywords :
Semiconductors , ion irradiation , GaAs nanostructures , surface morphology , AFM , Micro-Raman
Journal title :
Surface and Coatings Technology
Serial Year :
2009
Journal title :
Surface and Coatings Technology
Record number :
1820796
Link To Document :
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