In-situ current–voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

The effect of irradiation by 650 keV 14N5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current–voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 1014 ions cm− 2. The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.