Title of article
Nanoscale friction of partially oxidized silicon nitride thin films
Author/Authors
Filla، نويسنده , , J. and Aguzzoli، نويسنده , , C. and Sonda، نويسنده , , V. J. Farias، نويسنده , , M.C.M. and Soares، نويسنده , , G.V. and Baumvol، نويسنده , , I.J.R. and Figueroa، نويسنده , , C.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
4528
To page
4531
Abstract
The nanoscale friction of partially oxidized silicon nitride thin films deposited by reactive magnetron sputtering was investigated. Post deposition thermal annealing in O2, trying to simulate the oxidation by atmospheric oxygen in working conditions, formed a partially oxidized layer at the surface with maximum thickness around 10 nm. Unidirectional sliding tests showed a decrease of the low-load friction coefficients of the sliding pair for the samples annealed in oxygen as compared to the non-annealed ones. The results are discussed on the lights of our extension of the crystal chemistry model, which establishes a relationship between ionic potential and friction coefficient.
Keywords
Silicon oxide , Silicon nitride , Nanoscale friction , Ionic potential
Journal title
Surface and Coatings Technology
Serial Year
2011
Journal title
Surface and Coatings Technology
Record number
1824436
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