Ion induced bending (IIB) phenomenon for 3-D structure fabrication

We propose a thin-film bending technique based on the ion-induced bending (IIB) phenomenon, which enables the fabrication of three-dimensional structural devices and arrays, such as micro-electro mechanical system (MEMS) devices. We investigated the IIB phenomenon with various film materials and various ion species. It was found that the distribution of vacancy occurs under ion-irradiation was the important parameter affecting the degree of bending, irrespective of film material and ion-species. Therefore, it was found that the bending angle could be controlled by the distribution of vacancy. Using this technique, a micron-sized region of a standing thin-film array could be produced using conventional ion-implantation equipment used in semiconductor manufacturing.