Nano-cell fabrication on InSb utilizing point defects behavior induced by focused ion beam

In ion irradiated GaSb, InSb and Ge, the induced point defects form voids and these voids develop to the cells by further irradiation. The nano-fabrication technique utilizing this behavior is performed on (100) InSb by focused Ga+ ion beam (FIB). Fabrication of nano-cell lattices with cell an interval of 30–300 nm are tried varying the acceleration voltage and the ion dose at room temperature, and the plan views and the cross-sectional views of the nano-cell structures are observed by scanning electron microscopy (SEM). The possible ranges of the cell interval, the cell diameter and the cell height are obtained from the results.