Characterization of the well-aligned ZnO nanorod structure on a pulsed laser deposited AlZnO seed layer

ZnO nanorod structures on InGaN light-emitting diode (LED) structures were grown by inserting the aluminum zinc oxide (AZO) seed layers through a sputtering and a pulsed laser deposition (PLD) processes. The well-aligned ZnO nanorods on the PLD-AZO seed layer had a higher crystalline quality and a preferred orientation along (002) plane because the X-ray intensity of (002) peak was stronger than that of (100) and (101) peaks. The inter-planar spacing in a high resolution transmission electron microscopy image is approximately 0.26 nm corresponding to (002) plane of the ZnO nanorod structure. The strong photoluminescence intensity of the ZnO nanorods on the PLD-AZO seed layer was observed at 378 nm. The light output power had a 54% enhancement for the InGaN LEDs with the ZnO nanorod structures on the PLD-AZO seed layer compared with a conventional LED structure.