Title of article :
Formation of graphene on SiC by chemical vapor deposition with liquid sources
Author/Authors :
Kim، نويسنده , , Jun Gyu and Kim، نويسنده , , Woo Sik and Kim، نويسنده , , Young Hee and Lim، نويسنده , , Chang-Hyun and Choi، نويسنده , , Doo Jin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
189
To page :
192
Abstract :
Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene‐ and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.
Keywords :
graphene , Graphene oxide (GO) , silicon carbide (SiC) , Toluene-based liquid source , Chemical vapor deposition (CVD) , Xylene-based liquid source
Journal title :
Surface and Coatings Technology
Serial Year :
2013
Journal title :
Surface and Coatings Technology
Record number :
1828662
Link To Document :
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