Real-time curvature and optical spectroscopy monitoring of magnetron-sputtered WTi alloy thin films

WTi thin films are known as potential adhesion promoters and diffusion barriers. WTi thin films were deposited by magnetron sputtering from an alloyed target (W:Ti ~ 70:30 at.%). Real-time surface differential reflectance (SDR) spectroscopy and wafer-curvature measurements were performed during deposition to study the growth and the film continuity threshold. SDR measurements during WTi deposition allow the determination of the change in reflectivity of p-polarized light (at Si substrate Brewsterʹs angle) between WTi film and Si substrate in order to monitor layer growth. The comparison between experimental and simulated WTi SDR signals assuming a homogeneous and continuous layer growth shows that film continuity is ensured beyond a thickness of 4.5 ± 0.2 nm. Real-time wafer-curvature measurements allow the determination of the intrinsic stress development in the film. Two regimes are noticed during the growth up to the development of a compressive steady state stress. The early stages of growth are rather complicated and divided into sub-regimes with similar boundaries revealed by both in situ techniques. Deposition of an interfacial continuous layer different from WTi bulk is suggested by both in situ techniques below a thickness of 4.5 nm.