Indium doped niobium phosphates as intermediate temperature proton conductors

Indium doped niobium phosphates were prepared from precursors of trivalent indium oxide, pentavalent niobium oxide and phosphoric acid. The obtained materials were characterized by X-ray diffraction, impedance spectroscopy, FT-IR spectroscopy and scanning electron microscopy. It was found that the indium doping promoted formation of the cubic Nb2P4O15 phase instead of the monoclinic Nb5P7O30 phase in the pristine niobium phosphates and enhanced the preservation of OH functional groups in the phosphates. The preserved OH functionalities in the phosphates after the heat treatment at 650 °C contributed to the anhydrous proton conductivity. The Nb0.9In0.1 phosphate exhibited a proton conductivity of five times higher than that of the un-doped analog at 250 °C. The conductivity was stabilized at a level of above 0.02 S cm−1 under dry atmosphere at 250 °C during the stability evaluation for 3 days.