Author/Authors :
Brillson، نويسنده , , L.J.، نويسنده ,
Abstract :
In this review, we examine the contributions of surface science research to the understanding of metal-semiconductor interfaces. In particular, we survey conventional concepts of Schottky barrier formation, indicate the wide range of ultrahigh vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of metal-semiconductor interfaces.
