d and f metal interface formation on silicon

In the first part of this review a description is presented on the experimental approach to the study of the formation of semiconductor interfaces, with a review of the relevant techniques, and a critical review of the recent experimental results on the formation of d-metal-silicon and f-metal-silicon interfaces. Two prototypes of d-metal interfaces are discussed: Pt-Si and Cu-Si. Unpublished data are discussed along with a review of the literature and in connection with other related systems. The second part is devoted to a systematic review of the investigation on the novel class of rare earth-silicon interfaces.