Adsorption of group-V elements on III–V (1 1 0) surfaces

Adsorption of group-V elements on III–V (1 1 0) surfaces has led to one of the most extensively investigated overlayer systems. Sb and Bi grow epitaxially on the (1 1 0) surfaces of several III–V semiconductors and show in general a (1 × 1) symmetry for one adsorbed monolayer. The resulting interfaces are atomically sharp and therefore suitable model systems for experimental and theoretical studies of the Schottky barrier formation. s paper we discuss the present stage of understanding of group-V covered III–V (1 1 0) surfaces. We provide a review of experimental techniques and results, and theoretical approaches applied to these systems. In particular state-of-the-art calculations based on density-functional theory are used to develop a comprehensive picture of the atomic structure, electronic states, vibrational properties, and their accompanying chemical trends. Different stages of the interface formation, from submonolayer coverages to thick overlayers, are considered.