Hydrogen chemisorption on III–V semiconductor surfaces

A review of the experimental data and theoretical results dealing with the fundamental aspects of the hydrogenation of III–V semiconductor surfaces is presented. The collected material covers the production available in the specialised literature in this field over the last 30 years. The whole body of surface science experimental and theoretical tools were exploited. According to the investigated physical properties the paper is divided into six sections including experimental, surface atomic geometry, vibrational properties, electronic properties and adsorption and desorption. The most extended part of the collected material deals with the (1 0 0) and (1 1 0) GaAs surfaces, InP surfaces were extensively studied as well, though at a reduced extent. As a general result the hydrogenation of GaAs can be taken as a case study and the consequent picture of general validity in the interpretation of the hydrogenation of all the III–V surfaces.